Visible light from silicon junctions under avalanche breakdown can be used to create microdisplay systems with integrated light sources. Junctions available in standard CMOS usually breaks down at much larger voltages ...

This work presents a detailed overview ofthe analytic methods for calculating the beam and gaseous thermal conductance components associated with uncooled VOx microbolometers. The conventional method to calculate the ...

All-CMOS silicon light sources, although not the choice semiconductor process for light generation, offer the possibility of large scale manufacturing, integration with digital and driver electronics as well as a wide ...

To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production technology. ...

The use of uncooled infrared sensors in thermal imaging is a fast growing market in the fields of security and health. The integration of uncooled or room temperature infrared sensors onto a silicon CMOS chip will ...

CMOS is arguably the most successful semiconductor technology in electronics history. This is clear by the constant efforts involved in scaling as the key driver of improving the performance of ICs to keep up with consumer ...

In this paper a novel technique to analyze the low-voltage breakdown regime of silicon diodes is presented. It is shown that the field emission tunnel current component of the reverse current does not cause energy transitions ...

The emission spectra of avalanching n+p junctions manufactured in a standard 350-nm CMOS technology with no process modifications are measured over a broad spectral range and at different current levels. In contrast to the ...

Emission spectra of avalanching n+p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. ...