Abstract:
Emission spectra of avalanching n+p junctions manufactured in a
standard CMOS technology with no process modifications were measured
over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at
various temperatures. The temperature coefficients of the emission rates at
different photon energies were determined. Below a photon energy of
1.35 eV the temperature coefficient of emission was positive, and above
1.35 eV the temperature coefficient was negative. Two narrowband
emissions were also identified from the temperature characterization,
namely an enhanced positive temperature coefficient at 1.15 eV photon
energy, and an enhanced negative temperature coefficient at 2.0 eV. Device
simulations and Monte Carlo simulations were used to interpret the results.
