Temperature characteristics of hot electron electroluminescence in silicon
| dc.contributor.author | Du Plessis, Monuko | |
| dc.contributor.author | Wen, Hanqing | |
| dc.contributor.author | Bellotti, Enrico | |
| dc.contributor.email | monuko.duplessis@up.ac.za | en_ZA |
| dc.date.accessioned | 2015-07-16T06:12:09Z | |
| dc.date.available | 2015-07-16T06:12:09Z | |
| dc.date.issued | 2015-05 | |
| dc.description.abstract | Emission spectra of avalanching n+p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results. | en_ZA |
| dc.description.librarian | hb2015 | en_ZA |
| dc.description.sponsorship | The work at the University of Pretoria was financially supported in part by INSiAVA (Pty) Ltd., Pretoria, South Africa. The work at Boston University was supported in part by the U.S.Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME). | en_ZA |
| dc.description.uri | https://www.osapublishing.org/oe/home.cfm | en_ZA |
| dc.identifier.citation | Du Plessis, M, Wen, H & Bellotti, E 2015, 'Temperature characteristics of hot electron electroluminescence in silicon', Optics Express, vol. 23, no. 10, pp. 12605-12612. | en_ZA |
| dc.identifier.issn | 1094-4087 (print) | |
| dc.identifier.issn | 1094-4087 (online) | |
| dc.identifier.uri | http://hdl.handle.net/2263/48931 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Optical Society of America | en_ZA |
| dc.rights | © 2015 The Optical Society | en_ZA |
| dc.subject | Temperature | en_ZA |
| dc.subject | Characteristics | en_ZA |
| dc.subject | Hot electron | en_ZA |
| dc.subject | Electroluminescence | en_ZA |
| dc.subject | Silicon | en_ZA |
| dc.title | Temperature characteristics of hot electron electroluminescence in silicon | en_ZA |
| dc.type | Postprint Article | en_ZA |