Abstract:
Visible light from silicon junctions under avalanche
breakdown can be used to create microdisplay systems with
integrated light sources. Junctions available in standard CMOS
usually breaks down at much larger voltages than the typical
operating voltage for integrated circuitry. It is possible to reduce
the operating voltage of by making use of techniques which
changes the electric field profile in light sources based on hot
carrier electroluminescence such as electric field reach through
between two highly doped implant regions. This work successfully
demonstrates the possibility of tailoring the operating voltage and
quantifying the optical performance in an integrated microdisplay
consisting of a 128 by 96 pixel array based on light sources in
standard CMOS. Based on the approach followed it becomes
possible to integrate light sources in such a manner that it can coexist
and interact with other on-chip analog and digital circuitry.
The requirements for architectural features of a microdisplay
in standard CMOS is discussed and it is shown to be possible to
create large scale integrated circuits containing integrated light
sources in standard CMOS without the need for postprocessing or
additional back end modifications.
