Electroluminescence from two junction punch through structures in silicon nanowires
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Date
Authors
Du Plessis, Monuko
Joubert, Trudi-Heleen
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers
Abstract
Hot carrier electroluminescence in two junction
devices under punch through conditions manufactured in silicon
on insulator nanowires are investigated. Of interest is the spectral
content of the light emission, as well as the external power
efficiency and the light extraction efficiency. An order of magnitude
improvement in external power efficiency was achieved
relative to a bulk silicon p-n junction in avalanche.
Description
Keywords
Silicon electroluminescence, Nanowire, Hot carriers, Silicon on insulator (SOI)
Sustainable Development Goals
Citation
Du Plessis, M & Joubert, T-H 2015, 'Electroluminescence from two junction punch through structures in silicon nanowires', IEEE Photonics Technology Letters, vol. 27, no. 16, pp. 1741-1744.