Electroluminescence from two junction punch through structures in silicon nanowires

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Authors

Du Plessis, Monuko
Joubert, Trudi-Heleen

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Publisher

Institute of Electrical and Electronics Engineers

Abstract

Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche.

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Keywords

Silicon electroluminescence, Nanowire, Hot carriers, Silicon on insulator (SOI)

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Citation

Du Plessis, M & Joubert, T-H 2015, 'Electroluminescence from two junction punch through structures in silicon nanowires', IEEE Photonics Technology Letters, vol. 27, no. 16, pp. 1741-1744.