Electroluminescence from two junction punch through structures in silicon nanowires
dc.contributor.author | Du Plessis, Monuko | |
dc.contributor.author | Joubert, Trudi-Heleen | |
dc.contributor.email | monuko@up.ac.za | en_ZA |
dc.date.accessioned | 2016-06-21T05:48:26Z | |
dc.date.available | 2016-06-21T05:48:26Z | |
dc.date.issued | 2015-08 | |
dc.description.abstract | Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche. | en_ZA |
dc.description.department | Electrical, Electronic and Computer Engineering | en_ZA |
dc.description.librarian | hb2016 | en_ZA |
dc.description.uri | http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=68 | en_ZA |
dc.identifier.citation | Du Plessis, M & Joubert, T-H 2015, 'Electroluminescence from two junction punch through structures in silicon nanowires', IEEE Photonics Technology Letters, vol. 27, no. 16, pp. 1741-1744. | en_ZA |
dc.identifier.issn | 1041-1135 | |
dc.identifier.other | 10.1109/LPT.2015.2438956 | |
dc.identifier.uri | http://hdl.handle.net/2263/53269 | |
dc.language.iso | en | en_ZA |
dc.publisher | Institute of Electrical and Electronics Engineers | en_ZA |
dc.rights | © 2015 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. | en_ZA |
dc.subject | Silicon electroluminescence | en_ZA |
dc.subject | Nanowire | en_ZA |
dc.subject | Hot carriers | en_ZA |
dc.subject | Silicon on insulator (SOI) | en_ZA |
dc.title | Electroluminescence from two junction punch through structures in silicon nanowires | en_ZA |
dc.type | Postprint Article | en_ZA |
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