Design and manufacture of quantum-confined SI light sources
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Date
Authors
Bogalecki, Alfons Willi
Du Plessis, Monuko
Journal Title
Journal ISSN
Volume Title
Publisher
South African Institute of Electrical Engineers
Abstract
To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production technology. The wafers were manufactured in the cleanroom using an electro-beam pattern generator (EPG). The SOI light source with the highest irradiance emitted about 9 times more optical power around = 850 m than a 0.35 m bulk-CMOS avalanche light-source operating at the same time current. It is shown that the buried oxide (BOX) layer in a SOI process could be used to reflect about 25% of otherwise lost downward-radiated light back up to increase the external power efficiency of SOI light sources.
Description
Keywords
Nanometre-scale SOI, Silicon light source, Quantum confinement, Silicon electroluminescence
Sustainable Development Goals
Citation
Bogalecki, AW & Du Plessis, M 2010, 'Design and manufacture of quantum-confined SI light sources', SAIEE Africa Research Journal, vol. 101, no. 1, pp. 11-16. [http://www.saiee.org.za//content.php?pageID=200#]