Design and manufacture of quantum-confined SI light sources

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Authors

Bogalecki, Alfons Willi
Du Plessis, Monuko

Journal Title

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Volume Title

Publisher

South African Institute of Electrical Engineers

Abstract

To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production technology. The wafers were manufactured in the cleanroom using an electro-beam pattern generator (EPG). The SOI light source with the highest irradiance emitted about 9 times more optical power around = 850 m than a 0.35 m bulk-CMOS avalanche light-source operating at the same time current. It is shown that the buried oxide (BOX) layer in a SOI process could be used to reflect about 25% of otherwise lost downward-radiated light back up to increase the external power efficiency of SOI light sources.

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Keywords

Nanometre-scale SOI, Silicon light source, Quantum confinement, Silicon electroluminescence

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Citation

Bogalecki, AW & Du Plessis, M 2010, 'Design and manufacture of quantum-confined SI light sources', SAIEE Africa Research Journal, vol. 101, no. 1, pp. 11-16. [http://www.saiee.org.za//content.php?pageID=200#]