Design and manufacture of quantum-confined SI light sources
| dc.contributor.author | Bogalecki, Alfons Willi | |
| dc.contributor.author | Du Plessis, Monuko | |
| dc.contributor.email | alfons.bogalecki@up.ac.za | en_US |
| dc.date.accessioned | 2011-06-15T15:11:59Z | |
| dc.date.available | 2011-06-15T15:11:59Z | |
| dc.date.issued | 2010-03 | |
| dc.description.abstract | To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production technology. The wafers were manufactured in the cleanroom using an electro-beam pattern generator (EPG). The SOI light source with the highest irradiance emitted about 9 times more optical power around = 850 m than a 0.35 m bulk-CMOS avalanche light-source operating at the same time current. It is shown that the buried oxide (BOX) layer in a SOI process could be used to reflect about 25% of otherwise lost downward-radiated light back up to increase the external power efficiency of SOI light sources. | en_US |
| dc.identifier.citation | Bogalecki, AW & Du Plessis, M 2010, 'Design and manufacture of quantum-confined SI light sources', SAIEE Africa Research Journal, vol. 101, no. 1, pp. 11-16. [http://www.saiee.org.za//content.php?pageID=200#] | en_US |
| dc.identifier.issn | 1234-4321 | |
| dc.identifier.uri | http://hdl.handle.net/2263/16853 | |
| dc.language.iso | en | en_US |
| dc.publisher | South African Institute of Electrical Engineers | en_US |
| dc.rights | South African Institute of Electrical Engineers | en_US |
| dc.subject | Nanometre-scale SOI | en_US |
| dc.subject | Silicon light source | en_US |
| dc.subject | Quantum confinement | en_US |
| dc.subject | Silicon electroluminescence | en_US |
| dc.subject.lcsh | Electroluminescent devices | en |
| dc.subject.lcsh | Silicon-on-insulator technology | en |
| dc.title | Design and manufacture of quantum-confined SI light sources | en_US |
| dc.type | Article | en_US |