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Browsing UP Experts (Danie Auret Collection) by Title
Now showing items 1-20 of 24
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(Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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(Elsevier, 2006)We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
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(Elsevier, 2009)Please read abstract in article
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(American Institute of Physics (AIP), 2010-10)We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...
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(Korean Physical Society, 2010-12)We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n- Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The ...
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(Elsevier, 2009)Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
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(Elsevier, 2009)Read abstract in article.
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(American Institute of Physics, 2011-01)Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2011)We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2007-04)Please open article to read abstract
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Electrical characterization of defects introduced during metallization processes in n-type germanium (Elsevier, 2009)We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
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(Elsevier, 2009)Please read abstract in article
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(American Institute of Physics, 2002-02-25)Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels ...
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(Elsevier, 2009)Please read abstract in article.
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(Elsevier, 2007-12)Please refer to abstract in article
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(Elsevier, 2006-04)We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
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(Suid Afrikaanse Akademie vir Wetenskap & Kuns, 2011)Spectral and electrical characteristion of ultraviolet (UV) sensitive photodiodes requires a calibrated optoelectronic system. For spectral characteristion, the irradiance of the UV light source, after the light passed ...
Now showing items 1-20 of 24