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Browsing UP Experts (Danie Auret Collection) by Issue Date

Browsing UP Experts (Danie Auret Collection) by Issue Date

Now showing items 1-20 of 24

Electrical characterization of vapor-phase-grown single-crystal ZnO

Auret, Francois Danie; Goodman, Stewart Alexander; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Look, D.C. (American Institute of Physics, 2002-02-25)

Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels ...
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Nyamhere, Cloud; Deenapanray, P.N.K.; Auret, Francois Danie; Farlow, F.C. (Elsevier, 2006)

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon

Auret, Francois Danie; Peaker, A.R.; Markevich, V.P.; Dobaczewski, L.; Gwilliam, R.M. (Elsevier, 2006-04)

We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
Electrical characterization of defects in heavy-ion implanted n-type Ge

Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Coelho, Sergio M.M.; Meyer, Walter Ernst; Decoster, S.; Matias, V.S.; Vantomme, A.; Smeets, D. (Elsevier, 2007-04)

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Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius (Elsevier, 2007-12)

Please refer to abstract in article
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
Effect of alpha-particle irradiation on the electrical properties of n-type Ge

Roro, K.T.; Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Coelho, Sergio M.M. (Elsevier, 2009)

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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Mtangi, Wilbert; Auret, Francois Danie; Nyamhere, Cloud; Janse van Rensburg, Pieter Johan; Chawanda, Albert; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Meyer, Walter Ernst (Elsevier, 2009)

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Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

Diale, M. (Mmantsae Moche); Auret, Francois Danie (Elsevier, 2009)

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Radiation damage in ZnO ion implanted at 15 K

Wendler, E.; Bilani, O.; Gartner, K.; Wesch, W.; Hayes, M.; Auret, Francois Danie; Lorenz, K.; Alves, E. (Elsevier, 2009)

Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
Electrical characterization of rare-earth implanted GaN

Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A. (Elsevier, 2009)

Please read abstract in article
Microstructural and surface characterization of thin gold films on n-Ge (111)

Nel, Jacqueline Margot; Chawanda, Albert; Auret, Francois Danie; Jordaan, W.; Odendaal, R.Q. (Quintin); Hayes, M.; Coelho, Sergio M.M. (Elsevier, 2009)

Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)

Please read abstract in article
Electrical characterization of defects introduced during metallization processes in n-type germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst (Elsevier, 2009)

We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
Damage formation in Ge during Ar+ and He+ implantation at 15 K

Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot (Elsevier, 2009)

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Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

Please read abstract in article.
Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
Lithium and electrical properties of ZnO

Vines, L.; Monakhov, E.V.; Schifano, R.; Mtangi, Wilbert; Auret, Francois Danie; Svensson, B.G. (American Institute of Physics, 2010-03)

Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...
Analysis of current voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range

Mtangi, Wilbert; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Nyamhere, Cloud; Nel, Jacqueline Margot; Chawanda, Albert (Elsevier, 2010-07)

Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo  and ideality factor, n have been studied as a function of temperature. ...
A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction

Kassier, Gunther Horst; Haupt, K.; Erasmus, N.; Rohwer, E.G.; Von Bergmann, H.M.; Schwoerer, H.; Coelho, Sergio M.M.; Auret, Francois Danie (American Institute of Physics (AIP), 2010-10)

We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...

Now showing items 1-20 of 24

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