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Browsing UP Experts (Danie Auret Collection) by Type "Postprint Article"
Now showing items 1-19 of 19
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(Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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(Elsevier, 2006)We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
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(Elsevier, 2009)Please read abstract in article
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(Elsevier, 2009)Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
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(Elsevier, 2009)Read abstract in article.
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(American Institute of Physics, 2011-01)Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2011)We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2007-04)Please open article to read abstract
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Electrical characterization of defects introduced during metallization processes in n-type germanium (Elsevier, 2009)We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
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(Elsevier, 2009)Please read abstract in article
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(Elsevier, 2009)Please read abstract in article.
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(Elsevier, 2006-04)We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
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(American Institute of Physics, 2010-03)Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...
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(Elsevier, 2009)Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
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(Elsevier, 2009)Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
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(Elsevier, 2007-12-15)When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
Now showing items 1-19 of 19