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Showing 20 out of a total of 24 results for collection: Research Articles (Danie Auret Collection).
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Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium
Coelho, Sergio M.M.
;
Auret, Francois Danie
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Lithium and electrical properties of ZnO
Vines, L.
;
Monakhov, E.V.
;
Schifano, R.
;
Mtangi, Wilbert
;
Auret, Francois Danie
;
Svensson, B.G.
(
American Institute of Physics
,
2010-03
)
Correlation between barrier heights and ideality factors of Ni/n-Ge (100) schottky barrier diodes
Chawanda, Albert
;
Nel, Jacqueline Margot
;
Auret, Francois Danie
;
Mtangi, Wilbert
;
Nyamhere, Cloud
;
Diale, M. (Mmantsae Moche)
;
Leach, Lindsay Josephine
(
Korean Physical Society
,
2010-12
)
Electrical characterization of defects introduced during metallization processes in n-type germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Janse van Rensburg, Pieter Johan
;
Nyamhere, Cloud
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)
Chawanda, Albert
;
Roro, K.T.
;
Auret, Francois Danie
;
Mtangi, Wilbert
;
Nyamhere, Cloud
;
Nel, Jacqueline Margot
;
Leach, Lindsay Josephine
(
Elsevier
,
2011
)
Electrical characterization of rare-earth implanted GaN
Janse van Rensburg, Pieter Johan
;
Auret, Francois Danie
;
Matias, V.S.
;
Vantomme, A.
(
Elsevier
,
2009
)
Radiation damage in ZnO ion implanted at 15 K
Wendler, E.
;
Bilani, O.
;
Gartner, K.
;
Wesch, W.
;
Hayes, M.
;
Auret, Francois Danie
;
Lorenz, K.
;
Alves, E.
(
Elsevier
,
2009
)
Electrical characterization of vapor-phase-grown single-crystal ZnO
Auret, Francois Danie
;
Goodman, Stewart Alexander
;
Legodi, Matshisa Johannes
;
Meyer, Walter Ernst
;
Look, D.C.
(
American Institute of Physics
,
2002-02-25
)
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Kalibrering van 'n opto-elektroniese stelsel vir die karakterisering van ultraviolet-sensitiewe fotodiodes
Van Schalkwyk, Louwrens
;
Meyer, Walter Ernst
;
Nel, Jacqueline Margot
;
Auret, Francois Danie
(
Suid Afrikaanse Akademie vir Wetenskap & Kuns
,
2011
)
Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)
Nyamhere, Cloud
;
Das, A.G.M.
;
Auret, Francois Danie
;
Chawanda, Albert
;
Mtangi, Wilbert
;
Odendaal, R.Q. (Quintin)
;
Carr, Alan
(
Elsevier
,
2009
)
Analysis of current voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
Mtangi, Wilbert
;
Janse van Rensburg, Pieter Johan
;
Diale, M. (Mmantsae Moche)
;
Auret, Francois Danie
;
Nyamhere, Cloud
;
Nel, Jacqueline Margot
;
Chawanda, Albert
(
Elsevier
,
2010-07
)
A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction
Kassier, Gunther Horst
;
Haupt, K.
;
Erasmus, N.
;
Rohwer, E.G.
;
Von Bergmann, H.M.
;
Schwoerer, H.
;
Coelho, Sergio M.M.
;
Auret, Francois Danie
(
American Institute of Physics (AIP)
,
2010-10
)
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
Nyamhere, Cloud
;
Deenapanray, P.N.K.
;
Auret, Francois Danie
;
Farlow, F.C.
(
Elsevier
,
2006
)
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition
Nyamhere, Cloud
;
Chawanda, Albert
;
Das, A.G.M.
;
Auret, Francois Danie
;
Hayes, M.
(
Elsevier
,
2007-12-15
)
Damage formation in Ge during Ar+ and He+ implantation at 15 K
Hayes, M.
;
Schroeter, A.
;
Wendler, E.
;
Wesch, W.
;
Auret, Francois Danie
;
Nel, Jacqueline Margot
(
Elsevier
,
2009
)
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
Auret, Francois Danie
;
Meyer, Walter Ernst
;
Janse van Rensburg, Pieter Johan
;
Hayes, M.
;
Nel, Jacqueline Margot
;
Von Wenckstern, Holger
;
Schmidt, H.
;
Biehne, G.
;
Hochmuth, H.
;
Lorenz, M.
;
Grundmann, Marius
(
Elsevier
,
2007-12
)
Microstructural and surface characterization of thin gold films on n-Ge (111)
Nel, Jacqueline Margot
;
Chawanda, Albert
;
Auret, Francois Danie
;
Jordaan, W.
;
Odendaal, R.Q. (Quintin)
;
Hayes, M.
;
Coelho, Sergio M.M.
(
Elsevier
,
2009
)
Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes
Diale, M. (Mmantsae Moche)
;
Auret, Francois Danie
(
Elsevier
,
2009
)
Defect production in strained p-type Si1-xGex by Er implantation
Mamor, M.
;
Pipeleers, B.
;
Auret, Francois Danie
;
Vantomme, M.
(
American Institute of Physics
,
2011-01
)
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Author
Auret, Francois Danie (24)
Janse van Rensburg, Pieter Johan (9)
Nel, Jacqueline Margot (9)
Meyer, Walter Ernst (8)
Nyamhere, Cloud (8)
Chawanda, Albert (7)
Coelho, Sergio M.M. (7)
Hayes, M. (6)
Mtangi, Wilbert (6)
Diale, M. (Mmantsae Moche) (4)
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Subject
Deep level transient spectroscopy (14)
Defects (8)
Diodes, Schottky-barrier (8)
Barrier height (5)
DLTS (5)
Germanium (5)
Annealing (3)
Electron beams (3)
Implantation (3)
Ion implantation (3)
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2009 (11)
2010 (4)
2007 (3)
2011 (3)
2006 (2)
2002 (1)
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