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Showing 20 out of a total of 85 results for community: Physics.
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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes
Tunhuma, Shandirai Malven
;
Auret, Francois Danie
;
Legodi, Matshisa Johannes
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2016-01
)
Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes
Munthali, Kinnock V.
;
Theron, C.C. (Chris)
;
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Prinsloo, Linda Charlotta
;
Njoroge, Eric Gitau
(
Springer
,
2014-12
)
Ar plasma induced deep levels in epitaxial n-GaAs
Venter, Andre
;
Nyamhere, Cloud
;
Botha, J.R.
;
Auret, Francois Danie
;
Janse van Rensburg, J.P.
;
Meyer, Walter Ernst
;
Coelho, Sergio M.M.
;
Kolkovsky, V.I.
(
American Institute of Physics
,
2012-03-08
)
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Kalibrering van 'n opto-elektroniese stelsel vir die karakterisering van ultraviolet-sensitiewe fotodiodes
Van Schalkwyk, Louwrens
;
Meyer, Walter Ernst
;
Nel, Jacqueline Margot
;
Auret, Francois Danie
(
Suid Afrikaanse Akademie vir Wetenskap & Kuns
,
2011
)
Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)
Chawanda, Albert
;
Roro, K.T.
;
Auret, Francois Danie
;
Mtangi, Wilbert
;
Nyamhere, Cloud
;
Nel, Jacqueline Margot
;
Leach, Lindsay Josephine
(
Elsevier
,
2011
)
Long range annealing of defects in germanium by low energy plasma ions
Archilla, J.F.R.
;
Coelho, Sergio M.M.
;
Auret, Francois Danie
;
Dubinko, V.I.
;
Hizhnyakov, V.
(
Elsevier
,
2015-03
)
Temperature-dependent current-voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
Mayimele, Meeheketo Advice
;
Diale, M. (Mmantsae Moche)
;
Mtangi, Wilbert
;
Auret, Francois Danie
(
Elsevier
,
2015-06
)
Annealing and surface conduction on hydrogen peroxide treated bulk melt grown, single crystal ZnO
Mtangi, Wilbert
;
Nel, J.M.
;
Auret, Francois Danie
;
Chawanda, Albert
;
Nyamhere, Cloud
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2012-10
)
Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS
Mtangi, Wilbert
;
Auret, Francois Danie
;
Diale, M. (Mmantsae Moche)
;
Coelho, Sergio M.M.
;
Legodi, Matshisa Johannes
;
Janse van Rensburg, Pieter Johan
;
Nel, Jacqueline Margot
(
American Institute of Physics
,
2012-05-03
)
Electrical characterization of vapor-phase-grown single-crystal ZnO
Auret, Francois Danie
;
Goodman, Stewart Alexander
;
Legodi, Matshisa Johannes
;
Meyer, Walter Ernst
;
Look, D.C.
(
American Institute of Physics
,
2002-02-25
)
Defects in swift heavy ion irradiated n-4H-SiC
Tunhuma, Shandirai Malven
;
Diale, M. (Mmantsae Moche)
;
Nel, Jacqueline Margot
;
Madito, M.J. (Moshawe)
;
Hlatshwayo, Thulani Thokozani
;
Auret, Francois Danie
(
Elsevier
,
2019-12
)
Radiation damage in ZnO ion implanted at 15 K
Wendler, E.
;
Bilani, O.
;
Gartner, K.
;
Wesch, W.
;
Hayes, M.
;
Auret, Francois Danie
;
Lorenz, K.
;
Alves, E.
(
Elsevier
,
2009
)
Unexpected properties of the inductively coupled plasma induced defect in germanium
Coelho, Sergio M.M.
;
Auret, Francois Danie
;
Janse van Rensburg, Pieter Johan
;
Nel, J.M.
(
Elsevier
,
2014-04
)
Ti- and Fe-related charge transition levels in beta-Ga2O3
Zimmermann, Christian
;
Frodason, Ymir Kalmann
;
Barnard, Abraham Willem
;
Varley, Joel Basile
;
Irmscher, Klaus
;
Galazka, Zbigniew
;
Karjalainen, Antti
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Vines, Lasse
(
American Institute of Physics
,
2020-02-18
)
Electrical characterization of deep levels created by bombarding nitrogen-doped 4HSiC with alpha-particle irradiation
Omotoso, Ezekiel
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Paradzah, Alexander Tapera
;
Legodi, Matshisa Johannes
(
Elsevier
,
2016-03
)
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements
Venter, Andre
;
Murape, D.M.
;
Botha, J.R.
;
Auret, Francois Danie
(
Elsevier
,
2015-01
)
Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC
Omotoso, Ezekiel
;
Paradzah, Alexander Tapera
;
Legodi, Matshisa Johannes
;
Diale, M. (Mmantsae Moche)
;
Meyer, Walter Ernst
;
Auret, Francois Danie
(
Elsevier
,
2017-10
)
Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing
Munthali, Kinnock V.
;
Theron, C.C. (Chris)
;
Auret, Francois Danie
;
Coelho, Sergio M.M.
(
Indian Academy of Sciences
,
2015-06
)
Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
Paradzah, Alexander Tapera
;
Auret, Francois Danie
;
Legodi, Matshisa Johannes
;
Omotoso, Ezekiel
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2015-09
)
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Auret, Francois Danie (85)
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Deep level transient spectroscopy (19)
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Germanium (9)
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