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Browsing by Subject "4H-SiC"

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Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

Gora, Valentine Elifas; Auret, Francois Danie; Danga, Helga Tariro; Tunhuma, Shandirai Malven; Nyamhere, Cloud; Igumbor, Emmanuel; Chawanda, Albert (Elsevier, 2019-08)

Please read abstract in the article.
Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC

Madito, Moshawe J.; Hlatshwayo, Thulani Thokozani; Skuratov, Vladimir A.; Mtshali, Christopher B.; Manyala, Ncholu I.; Khumalo, Zakhelumuzi M. (Elsevier, 2019-11)

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The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

Omotoso, Ezekiel; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Igumbor, Emmanuel; Tunhuma, Shandirai Malven; Ngoepe, Phuti Ngako Mahloka; Danga, Helga Tariro; Auret, Francois Danie (Elsevier, 2017-10)

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Electrical characterisation of particle irradiated 4H-SiC

Paradzah, Alexander Tapera (University of Pretoria, 2014)

Silicon Carbide is a wide bandgap semiconductor with excellent physical and opto-electrical properties. Among these excellent properties are its radiation hardness, high temperature operation and high electric field ...
Electrical characterization of deep levels created by bombarding nitrogen-doped 4HSiC with alpha-particle irradiation

Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Paradzah, Alexander Tapera; Legodi, Matshisa Johannes (Elsevier, 2016-03)

Deep-level transient spectroscopy (DLTS) and Laplace-DLTS were used to investigate the effect of alpha-particle irradiation on the electrical properties of nitrogen-doped 4H-SiC. The samples were bombarded with alpha-particles ...
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Omotoso, Ezekiel; Meyer, Walter Ernst; Coelho, Sergio M.M.; Diale, M. (Mmantsae Moche); Ngoepe, Phuti Ngako Mahloka; Auret, Francois Danie (Elsevier, 2016-08)

We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements ...
Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC

Omotoso, Ezekiel; Paradzah, Alexander Tapera; Legodi, Matshisa Johannes; Diale, M. (Mmantsae Moche); Meyer, Walter Ernst; Auret, Francois Danie (Elsevier, 2017-10)

Please read abstract in the article.
In situ study of low-temperature irradiation-induced defects in silicon carbide

Tunhuma, Shandirai Malven; Auret, Francois Danie; Danga, Helga Tariro; Nel, Jacqueline Margot; Diale, M. (Mmantsae Moche) (Springer, 2019-06)

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Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M. (Indian Academy of Sciences, 2015-06)

Rutherford backscattering spectrometry(RBS) analysis , carried out at various annealing temperatures, of a thin film of ruthenium on n-type 4-hexagonal silicon carbide (4H-SiC) showed evidence of ruthenium oxidation, ruthenium ...
Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Diale, M. (Mmantsae Moche); Ngoepe, Phuti Ngako Mahloka (Elsevier, 2016-01)

Irradiation experiments have been carried out on 1.9 × 1016 cm–3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 1010 to 9.2 × 1011 cm–2. Current-voltage ...

Browsing by Subject "4H-SiC"

Browsing by Subject "4H-SiC"

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