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Showing 10 out of a total of 86 results for community: University of Pretoria: Research Output.
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Chemical and electrical characteristics of annealed Ni/Au and Ni/Ir/Au contacts on AlGaN
Ngoepe, Phuti Ngako Mahloka
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Omotoso, Ezekiel
;
Diale, M. (Mmantsae Moche)
;
Swart, H.C.
;
Duvenhage, M.M.
;
Coetsee, E.
(
Elsevier
,
2016-01
)
Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs
Tunhuma, Shandirai Malven
;
Auret, Francois Danie
;
Nel, Jacqueline Margot
;
Omotoso, Ezekiel
;
Danga, Helga Tariro
;
Igumbor, Emmanuel
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2017-10
)
Correlation between barrier heights and ideality factors of Ni/n-Ge (100) schottky barrier diodes
Chawanda, Albert
;
Nel, Jacqueline Margot
;
Auret, Francois Danie
;
Mtangi, Wilbert
;
Nyamhere, Cloud
;
Diale, M. (Mmantsae Moche)
;
Leach, Lindsay Josephine
(
Korean Physical Society
,
2010-12
)
Analysis of current voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
Mtangi, Wilbert
;
Janse van Rensburg, Pieter Johan
;
Diale, M. (Mmantsae Moche)
;
Auret, Francois Danie
;
Nyamhere, Cloud
;
Nel, Jacqueline Margot
;
Chawanda, Albert
(
Elsevier
,
2010-07
)
A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction
Kassier, Gunther Horst
;
Haupt, K.
;
Erasmus, N.
;
Rohwer, E.G.
;
Von Bergmann, H.M.
;
Schwoerer, H.
;
Coelho, Sergio M.M.
;
Auret, Francois Danie
(
American Institute of Physics (AIP)
,
2010-10
)
Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS
Pienaar, J.
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Coelho, Sergio M.M.
(
Elsevier
,
2012-05
)
Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)
Nyamhere, Cloud
;
Das, A.G.M.
;
Auret, Francois Danie
;
Chawanda, Albert
;
Mtangi, Wilbert
;
Odendaal, R.Q. (Quintin)
;
Carr, Alan
(
Elsevier
,
2009
)
Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon
Danga, Helga Tariro
;
Auret, Francois Danie
;
Tunhuma, Shandirai Malven
;
Omotoso, Ezekiel
;
Igumbor, Emmanuel
;
Meyer, Walter Ernst
(
American Institute of Physics
,
2019-06-03
)
Electrical characterization of defects introduced during metallization processes in n-type germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Janse van Rensburg, Pieter Johan
;
Nyamhere, Cloud
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
DLTS characterization of defects in GaN induced by electron beam exposure
Ngoepe, Phuti Ngako Mahloka
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Omotoso, Ezekiel
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2017-06
)
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Auret, Francois Danie (86)
Meyer, Walter Ernst (39)
Diale, M. (Mmantsae Moche) (36)
Coelho, Sergio M.M. (29)
Janse van Rensburg, Pieter Johan (22)
Nel, Jacqueline Margot (22)
Nyamhere, Cloud (18)
Omotoso, Ezekiel (17)
Chawanda, Albert (16)
Mtangi, Wilbert (15)
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Deep level transient spectroscopy (19)
Defects (18)
Deep level transient spectroscopy (DLTS) (15)
Annealing (12)
Deep-level transient spectroscopy (DLTS) (11)
Barrier height (10)
Germanium (9)
Schottky contacts (9)
4H-SiC (8)
Diodes, Schottky-barrier (8)
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2010 - 2020 (69)
2002 - 2009 (17)
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