Abstract:
Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy (±80 eV) inductively coupled plasma (ICP) etching using Ar. The defect, named EP0.31, had an energy level 0.31 eV below the conduction band. Models of Pons and Makram-Ebeid (1979) [2] and Ganichev and Prettl (1997) [3], which describe emission due to phonon assisted tunnelling, were fitted to the observed electric field dependence of the emission rate. The model of Pons and Makram-Ebeid fitted the measured emission rate more accurately the Ganichev and Prettl. However the model of Ganichev and Prettl has only two parameters, while the model of Pons and Makram-Ebeid has four. Both models showed a trasition in the dominant emission mechanism from a weak electron-phonon coupling below 152.5 K to a strong electron –phonon coupling above 155 K. After the application of a x2 goodness of fit test, it was determined that the model of Pons and Makram-Ebeid describes the data well, while that of Ganichev and Prettl does not.
