The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of
electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and
capture cross section of 8.0 × 10-16 cm2 was induced by the exposure. The defect was similar
to defects induced by other irradiation techniques such as proton, electron, and gamma
irradiation. In comparison to GaN, the EBE induced defects in other materials such as Si and
SiC are similar to those induced by other irradiation methods.