Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, Refilwe Edwin; Meyer, Walter Ernst
URI: http://hdl.handle.net/2263/70299
Date: 2019-08

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