Browsing Research Articles (Physics) by UP Author "Friedland, Erich Karl Helmuth"

Browsing Research Articles (Physics) by UP Author "Friedland, Erich Karl Helmuth"

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  • Damage formation and optical absorption in neutron irradiated SiC 
    Wendler, E.; Bierschenk, Th.; Felgentrager, F.; Sommerfeld, J.; Wesch, W.; Alber, D.; Bukalis, G.; Prinsloo, Linda Charlotta; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B. (Elsevier, 2012-09)
    The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration ...
  • Diffusion behaviour of cesium in silicon carbide at T > 1000 °C 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Malherbe, Johan B.; Wendler, E. (Elsevier, 2012)
    Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). ...
  • Heat treatment of glassy carbon implanted with cesium at room and high temperatures 
    Langa, Dolly Frans; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B.; Botha, A.J.; Chakraborty, P.; Wendler, E.; Wesch, W. (Elsevier, 2012-02-15)
    The effect of annealing temperature on the surface morphology and on the diffusion of cesium ions implanted into glassy carbon (Sigradur® G) is reported. The samples were implanted with 360 keV cesium ions to a fluence of ...
  • Influence of radiation damage on diffusion of fission products in silicon carbide 
    Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George) (Wiley-Blackwell, 2013)
    The influence of irradiation induced damage on the transport of implanted species in poly and single crystalline silicon carbide is investigated. For this purpose published diffusion results of strontium, silver, iodine and ...
  • Influence of radiation damage on krypton diffusion in silicon carbide 
    Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George); Mabena, Chemist Mfanufikile (Elsevier, 2015-07)
    Diffusion of krypton in poly and single crystalline silicon carbide is investigated and compared with the previously obtained results for xenon, which pointed to a different diffusion mechanism than observed for chemically ...
  • Influence of radiation damage on strontium and iodine diffusion in silicon carbide 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Malherbe, Johan B. (Elsevier, 2012)
    Please read abstract in article.
  • Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George) (Elsevier, 2016-03)
    Diffusion of heavy noble gas atoms in irradiation damaged single crystalline silicon carbide and the thermal etching of it is investigated at temperatures of 1300 C and 1400 C. For this purpose 360 keV krypton and xenon ...
  • Influence of radiation damage on xenon diffusion in silicon carbide 
    Friedland, Erich Karl Helmuth; Gärtner, K.; Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George); Thabane, Tebello T. (Elsevier, 2014-08)
    Diffusion of xenon in poly and single crystalline silicon carbide and the possible influence of radiation damage on it are investigated. For this purpose 360 keV xenon ions were implanted in commercial 6H-SiC and CVD-SiC ...
  • Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges 
    Friedland, Erich Karl Helmuth (Elsevier, 2017-01)
    At ion energies with inelastic stopping powers less than a few keV/nm, radiation damage is thought to be due to atomic displacements by elastic collisions only. However, it is well known that inelastic processes and ...
  • Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Malherbe, Johan B.; Hancke, J.J. (Jacobus Johannes); Barry, J.; Wendler, E.; Wesch, W. (Elsevier, 2011-03)
    Please read abstract in article.
  • Scanning electron microscopy of the surfaces of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Kuhudzai, Remeredzai Joseph; Hlatshwayo, Thulani Thokozani; Thabethe, Thabsile Theodora; Odutemowo, Opeyemi Shakirah; Theron, C.C. (Chris); Friedland, Erich Karl Helmuth; Botha, A.J.; Wendler, E. (Elsevier, 2015-07)
    This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the ...
  • SEM analysis of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Wendler, E.; Wesch, W.; Chakraborty, P.; Da Silveira, E.F. (Elsevier, 2013-11)
    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive ...
  • A study of amorphization energies in silicon for different implantation parameters 
    Friedland, Erich Karl Helmuth (Elsevier, 2007-03)
    Please open article to read abstract