Abstract:
Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated
by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling
and scanning electron microscopy (SEM). Implantations were done at room temperature,
350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed.
Transport mechanisms were studied by isochronal and isothermal annealing methods
up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by
an impurity trapping mechanism of defect structures and is similar in single and polycrystalline
SiC.
