Diffusion behaviour of cesium in silicon carbide at T > 1000 °C
| dc.contributor.author | Friedland, Erich Karl Helmuth | |
| dc.contributor.author | Van der Berg, Nic (Nicolaas George) | |
| dc.contributor.author | Hlatshwayo, Thulani Thokozani | |
| dc.contributor.author | Kuhudzai, Remeredzai Joseph | |
| dc.contributor.author | Malherbe, Johan B. | |
| dc.contributor.author | Wendler, E. | |
| dc.contributor.email | erich.friedland@up.ac.za | en_US |
| dc.date.accessioned | 2012-01-24T06:28:50Z | |
| dc.date.available | 2012-01-24T06:28:50Z | |
| dc.date.issued | 2012 | |
| dc.description.abstract | Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). Implantations were done at room temperature, 350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed. Transport mechanisms were studied by isochronal and isothermal annealing methods up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by an impurity trapping mechanism of defect structures and is similar in single and polycrystalline SiC. | en |
| dc.description.librarian | nf2012 | en |
| dc.description.sponsorship | National Research Foundation and the Bundesministerium für Bildung und Forschung. | en_US |
| dc.description.uri | http://www.sciencedirect.com/science/journal/0168583X | en_US |
| dc.identifier.citation | Friedland, E et al., Diffusion behaviour of cesium in silicon carbide, Nuclear Instruments & Methods in Physics Research Section B : Beam Interactions with Materials and Atoms. (2012), doi:10.1016/j.nimb.2011.11.048 | en |
| dc.identifier.issn | 0168-583X (print) | |
| dc.identifier.issn | 1872-9584 (online) | |
| dc.identifier.other | 10.1016/j.nimb.2011.11.048 | |
| dc.identifier.uri | http://hdl.handle.net/2263/17877 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2012 Published by Elsevier B.V. | en |
| dc.subject | Isochronal and isothermal annealing | en |
| dc.subject.lcsh | Diffusion | en |
| dc.subject.lcsh | Cesium -- Diffusion rate | en |
| dc.subject.lcsh | Silicon carbide | en |
| dc.subject.lcsh | Ion implantation | en |
| dc.title | Diffusion behaviour of cesium in silicon carbide at T > 1000 °C | en |
| dc.type | Postprint Article | en |