Influence of radiation damage on krypton diffusion in silicon carbide
Loading...
Date
Authors
Friedland, Erich Karl Helmuth
Hlatshwayo, Thulani Thokozani
Van der Berg, Nic (Nicolaas George)
Mabena, Chemist Mfanufikile
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Diffusion of krypton in poly and single crystalline silicon carbide is investigated and compared with the
previously obtained results for xenon, which pointed to a different diffusion mechanism than observed for
chemically active elements. For this purpose 360 keV krypton ions were implanted in commercial 6H-SiC
and CVD-SiC wafers at room temperature, 350 °C and 600 °C. Width broadening of the implantation profiles
and krypton retention during isochronal and isothermal annealing up to temperatures of 1400 °C was determined
by RBS-analysis, whilst in the case of 6H-SiC damage profiles were simultaneously obtained by α-
particle channelling. Little diffusion and no krypton loss was detected in the initially amorphized and eventually
recrystallized surface layer of cold implanted 6H-SiC during annealing up to 1200 °C. Above that
temperature thermal etching of the implanted surface became increasingly important. No diffusion or krypton
loss is detected in the hot implanted 6H-SiC samples during annealing up to 1400 °C. Radiation damage
dependent grain boundary diffusion is observed at 1300 C in CVD-SiC. The results seem to indicate, that
the chemically inert noble gas atoms do not form defect-impurity complexes, which strongly influence the
diffusion behaviour of other diffusors in silicon carbide.
Description
Keywords
Silicon carbide, Diffusion, Radiation damage
Sustainable Development Goals
Citation
Friedland, E, Hlatshwayo, TT, Van Der Berg, NG & Mabena, MC 2015, 'Influence of radiation damage on krypton diffusion in silicon carbide', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 354, pp. 42-46.