Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the
60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been
studied as a function of temperature. ...
We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n-
Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of
Ni on n-Ge (100). The ...
