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Showing 10 out of a total of 16 results for community: Physics.
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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
Omotoso, Ezekiel
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Paradzah, Alexander Tapera
;
Diale, M. (Mmantsae Moche)
;
Coelho, Sergio M.M.
;
Janse van Rensburg, Pieter Johan
(
Elsevier
,
2015-11
)
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
Omotoso, Ezekiel
;
Meyer, Walter Ernst
;
Janse van Rensburg, Pieter Johan
;
Igumbor, Emmanuel
;
Tunhuma, Shandirai Malven
;
Ngoepe, Phuti Ngako Mahloka
;
Danga, Helga Tariro
;
Auret, Francois Danie
(
Elsevier
,
2017-10
)
The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
Mtangi, Wilbert
;
Auret, Francois Danie
;
Nyamhere, Cloud
;
Janse van Rensburg, Pieter Johan
;
Chawanda, Albert
;
Diale, M. (Mmantsae Moche)
;
Nel, Jacqueline Margot
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Observation of low-temperature annealing of a primary defect in gallium nitride
Schmidt, Matthias
;
Janse van Rensburg, Pieter Johan
;
De Meyer, Hannes
;
Meyer, Walter Ernst
;
Auret, Francois Danie
(
Elsevier
,
2014-04
)
Inductively coupled plasma induced deep levels in epitaxial n-GaAs
Venter, Andre
;
Nyamhere, Cloud
;
Botha, J.R.
;
Auret, Francois Danie
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
;
Coelho, Sergio M.M.
;
Kolkovsky, V.I.
(
Elsevier
,
2012-05
)
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
Auret, Francois Danie
;
Meyer, Walter Ernst
;
Janse van Rensburg, Pieter Johan
;
Hayes, M.
;
Nel, Jacqueline Margot
;
Von Wenckstern, Holger
;
Schmidt, H.
;
Biehne, G.
;
Hochmuth, H.
;
Lorenz, M.
;
Grundmann, Marius
(
Elsevier
,
2007-12
)
Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts
Taghizadeh, Fatemeh
;
Janse van Rensburg, Pieter Johan
;
Ostvar, Kian
;
Meyer, Walter Ernst
;
Auret, Francois Danie
(
Elsevier
,
2019-08
)
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Electrical characterization of metastable defects introduced in GaN by eu-ion implantation
Auret, Francois Danie
;
Meyer, Walter Ernst
;
Diale, M. (Mmantsae Moche)
;
Janse van Rensburg, Pieter Johan
;
Song, S.F.
;
Temst, K.
;
Vantomme, A.
(
Trans Tech
,
2011-03
)
Electrical characterization of defects introduced during metallization processes in n-type germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Janse van Rensburg, Pieter Johan
;
Nyamhere, Cloud
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
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Auret, Francois Danie (16)
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