Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts
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Date
Authors
Taghizadeh, Fatemeh
Janse van Rensburg, Pieter Johan
Ostvar, Kian
Meyer, Walter Ernst
Auret, Francois Danie
Journal Title
Journal ISSN
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Publisher
Elsevier
Abstract
Please read abstract in the article.
Description
Keywords
Schottky barrier contact (SBD), Sputter-deposition induced defects in GaAs, Laplace deep-level transient spectroscopy, Metastability, Transformation kinetics, Near-surface damage
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Citation
Taghizadeh, F.,Janse van Rensburg, P.J., Ostvar, K. et al. 2019, 'Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts', Materials Science in Semiconductor Processing, vol. 99, pp. 23-27.