The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

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Authors

Omotoso, Ezekiel
Meyer, Walter Ernst
Auret, Francois Danie
Paradzah, Alexander Tapera
Diale, M. (Mmantsae Moche)
Coelho, Sergio M.M.
Janse van Rensburg, Pieter Johan

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Elsevier

Abstract

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Keywords

Richardson constant, Silicon carbide, High energy electron (HEE), Metal-semiconductor (MS), Schottky barrier diodes (SBDs)

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Citation

Omotoso, E, Meyer, WE, Auret, FD, Paradzah, AT, Diale, M, Coelho, SMM & Janse van Rensburg, PJ 2015, 'The influence of high energy electron irradiation on the schottky barrier height and the richardson constant of Ni/4H-SiC schottky diodes', Materials Science in Semiconductor Processing, vol. 39, pp. 112-118.