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Showing 10 out of a total of 85 results for community: Physics.
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Unexpected properties of the inductively coupled plasma induced defect in germanium
Coelho, Sergio M.M.
;
Auret, Francois Danie
;
Janse van Rensburg, Pieter Johan
;
Nel, J.M.
(
Elsevier
,
2014-04
)
Ti- and Fe-related charge transition levels in beta-Ga2O3
Zimmermann, Christian
;
Frodason, Ymir Kalmann
;
Barnard, Abraham Willem
;
Varley, Joel Basile
;
Irmscher, Klaus
;
Galazka, Zbigniew
;
Karjalainen, Antti
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Vines, Lasse
(
American Institute of Physics
,
2020-02-18
)
Ar plasma induced deep levels in epitaxial n-GaAs
Venter, Andre
;
Nyamhere, Cloud
;
Botha, J.R.
;
Auret, Francois Danie
;
Janse van Rensburg, J.P.
;
Meyer, Walter Ernst
;
Coelho, Sergio M.M.
;
Kolkovsky, V.I.
(
American Institute of Physics
,
2012-03-08
)
Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts
Taghizadeh, Fatemeh
;
Janse van Rensburg, Pieter Johan
;
Ostvar, Kian
;
Meyer, Walter Ernst
;
Auret, Francois Danie
(
Elsevier
,
2019-08
)
Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS
Mtangi, Wilbert
;
Auret, Francois Danie
;
Diale, M. (Mmantsae Moche)
;
Coelho, Sergio M.M.
;
Legodi, Matshisa Johannes
;
Janse van Rensburg, Pieter Johan
;
Nel, Jacqueline Margot
(
American Institute of Physics
,
2012-05-03
)
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Electrical characterization of deep levels created by bombarding nitrogen-doped 4HSiC with alpha-particle irradiation
Omotoso, Ezekiel
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Paradzah, Alexander Tapera
;
Legodi, Matshisa Johannes
(
Elsevier
,
2016-03
)
Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure
Omotoso, Ezekiel
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Ngoepe, Phuti Ngako Mahloka
(
Trans Tech Publications
,
2016
)
Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
Paradzah, Alexander Tapera
;
Auret, Francois Danie
;
Legodi, Matshisa Johannes
;
Omotoso, Ezekiel
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2015-09
)
Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes
Munthali, Kinnock V.
;
Theron, C.C. (Chris)
;
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Prinsloo, Linda Charlotta
;
Njoroge, Eric Gitau
(
Springer
,
2014-12
)
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Auret, Francois Danie (85)
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Diale, M. (Mmantsae Moche) (36)
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Deep level transient spectroscopy (19)
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Deep level transient spectroscopy (DLTS) (15)
Annealing (12)
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Deep-level transient spectroscopy (DLTS) (10)
Germanium (9)
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