Electrical characterization of deep levels created by bombarding nitrogen-doped 4HSiC with alpha-particle irradiation
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Date
Authors
Omotoso, Ezekiel
Meyer, Walter Ernst
Auret, Francois Danie
Paradzah, Alexander Tapera
Legodi, Matshisa Johannes
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Deep-level transient spectroscopy (DLTS) and Laplace-DLTS were used to investigate the
effect of alpha-particle irradiation on the electrical properties of nitrogen-doped 4H-SiC. The
samples were bombarded with alpha-particles at room temperature (300 K) using an
americium-241 (241Am) radionuclide source. DLTS revealed the presence of four deep levels
in the as-grown samples, E0.09, E0.11, E0.16 and E0.65. After irradiation with a fluence of 4.1 ×
1010 alpha-particles-cm–2, DLTS measurements indicated the presence of two new deep
levels, E0.39 and E0.62 with energy level, EC – 0.39 eV and EC –0.62 eV, with an apparent
capture cross sections of 2×10–16 and 2×10–14 cm2, respectively. Furthermore, irradiation with
fluence of 8.9×1010 alpha-particles-cm–2 resulted in disappearance of shallow defects due to a
lowering of the Fermi level. These defects -
minutes. Defects, E0.39 and E0.42 with close emission rates were attributed to silicon or carbon
vacancy and could only be separated by using high resolution Laplace-DLTS. The DLTS
peaks at EC – (0.55-0.70) eV (known as Z1/Z2) were attributed to an isolated carbon vacancy
(VC).
Description
Keywords
4H-SiC, Alpha-particle irradiation, Annealing, Schottky barrier diode, Deep-level transient spectroscopy (DLTS), Laplace-DLTS
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Citation
Omotoso, E, Meyer, WE, Auret, FD, Paradzah, AT & Legodi, MJ 2016, 'Electrical characterization of deep levels created by bombarding nitrogen-doped 4HSiC with alpha-particle irradiation', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 371, pp. 312-316.