Browsing Physics by Author "Van der Berg, Nic (Nicolaas George)"

Browsing Physics by Author "Van der Berg, Nic (Nicolaas George)"

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  • Cobalt silicide formation on a Si(1 0 0) substrate in the presence of an interfacial (Fe90Zr10) interlayer 
    Abrass, Hameda A.; Theron, C.C. (Chris); Njoroge, Eric Gitau; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Yan, X- L.; Terblans, J.J. (Elsevier, 2015-09)
    The reaction between a thin film (126 nm) of Co and Si has been studied at 450 C for 24 h under high vacuum conditions, in the presence of a FeZr barrier layer. Without a diffusion barrier layer between Co and Si, Co2Si ...
  • Damage formation and optical absorption in neutron irradiated SiC 
    Wendler, E.; Bierschenk, Th.; Felgentrager, F.; Sommerfeld, J.; Wesch, W.; Alber, D.; Bukalis, G.; Prinsloo, Linda Charlotta; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B. (Elsevier, 2012-09)
    The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration ...
  • Diffusion behaviour of cesium in silicon carbide at T > 1000 °C 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Malherbe, Johan B.; Wendler, E. (Elsevier, 2012)
    Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). ...
  • Heat treatment of glassy carbon implanted with cesium at room and high temperatures 
    Langa, Dolly Frans; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B.; Botha, A.J.; Chakraborty, P.; Wendler, E.; Wesch, W. (Elsevier, 2012-02-15)
    The effect of annealing temperature on the surface morphology and on the diffusion of cesium ions implanted into glassy carbon (Sigradur® G) is reported. The samples were implanted with 360 keV cesium ions to a fluence of ...
  • Influence of radiation damage on diffusion of fission products in silicon carbide 
    Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George) (Wiley-Blackwell, 2013)
    The influence of irradiation induced damage on the transport of implanted species in poly and single crystalline silicon carbide is investigated. For this purpose published diffusion results of strontium, silver, iodine and ...
  • Influence of radiation damage on krypton diffusion in silicon carbide 
    Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George); Mabena, Chemist Mfanufikile (Elsevier, 2015-07)
    Diffusion of krypton in poly and single crystalline silicon carbide is investigated and compared with the previously obtained results for xenon, which pointed to a different diffusion mechanism than observed for chemically ...
  • Influence of radiation damage on strontium and iodine diffusion in silicon carbide 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Malherbe, Johan B. (Elsevier, 2012)
    Please read abstract in article.
  • Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George) (Elsevier, 2016-03)
    Diffusion of heavy noble gas atoms in irradiation damaged single crystalline silicon carbide and the thermal etching of it is investigated at temperatures of 1300 C and 1400 C. For this purpose 360 keV krypton and xenon ...
  • Influence of radiation damage on xenon diffusion in silicon carbide 
    Friedland, Erich Karl Helmuth; Gärtner, K.; Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George); Thabane, Tebello T. (Elsevier, 2014-08)
    Diffusion of xenon in poly and single crystalline silicon carbide and the possible influence of radiation damage on it are investigated. For this purpose 360 keV xenon ions were implanted in commercial 6H-SiC and CVD-SiC ...
  • Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Malherbe, Johan B.; Hancke, J.J. (Jacobus Johannes); Barry, J.; Wendler, E.; Wesch, W. (Elsevier, 2011-03)
    Please read abstract in article.
  • Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures 
    Hlatshwayo, Thulani Thokozani; Van der Berg, Nic (Nicolaas George); Msimanga, M.; Malherbe, Johan B.; Kuhudzai, Remeredzai Joseph (Elsevier, 2014-09)
    The effect of high temperature thermal annealing on the retainment and diffusion behaviour of iodine (I) and silver (Ag) both individually and co-implanted into 6H-SiC has been investigated using RBS, RBS-C and heavy ion ...
  • Microstructure and crystal structure of an equimolar Mg-Ti alloy processed by Simoloyer high-energy ball mill 
    Maweja, Maje; Maweja, Kasonde; Van der Berg, Nic (Nicolaas George) (Elsevier, 2010-05)
    The solid solubility of 50-50 at.% Mg-Ti powder mixtures was achieved by means of high energy ball milling in a Simoloyer equipment. XRD and HRTEM analyses revealed the existence of FCC and BCC matrix of Ti solid solution ...
  • Scanning electron microscopy of the surfaces of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Kuhudzai, Remeredzai Joseph; Hlatshwayo, Thulani Thokozani; Thabethe, Thabsile Theodora; Odutemowo, Opeyemi Shakirah; Theron, C.C. (Chris); Friedland, Erich Karl Helmuth; Botha, A.J.; Wendler, E. (Elsevier, 2015-07)
    This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the ...
  • SEM analysis of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Wendler, E.; Wesch, W.; Chakraborty, P.; Da Silveira, E.F. (Elsevier, 2013-11)
    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive ...
  • Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation 
    Njoroge, Eric Gitau; Theron, C.C. (Chris); Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Hlatshwayo, Thulani Thokozani; Skuratov, V.A. (Elsevier, 2015-07)
    In this study thin Zr films (135 nm) were deposited on 6H-SiC substrate at room temperature by sputter deposition. The Zr/SiC couples were irradiated by 167 MeV Xe26+ ions at room temperature at fluences of 5.0 1012, ...