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Browsing Physics by Author "Theron, C.C. (Chris)"
Now showing items 1-16 of 16
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Abrass, Hameda A.; Theron, C.C. (Chris); Njoroge, Eric Gitau; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Yan, X- L.; Terblans, J.J. (Elsevier, 2015-09)The reaction between a thin film (126 nm) of Co and Si has been studied at 450 C for 24 h under high vacuum conditions, in the presence of a FeZr barrier layer. Without a diffusion barrier layer between Co and Si, Co2Si ...
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Malherbe, Johan B.; Selyshchev, Pavel; Odutemowo, Opeyemi Shakirah; Theron, C.C. (Chris); Njoroge, Eric Gitau; Langa, Dolly Frans; Hlatshwayo, Thulani Thokozani (Elsevier, 2017-09)The implanted profile in an isotropic substrate of a mono-energetic ion species is usually very near a Gaussian profile. An exact solution to the time-dependent Fick diffusion equation of an initially Gaussian profile is ...
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Innocent, Audu Joseph; Hlatshwayo, Thulani Thokozani; Njoroge, Eric Gitau; Ntsoane, Tshepo Paul; Madhuku, M.; Ejeh, E.O.; Mlambo, Mbuso; Ismail, Mahjoub Yagoub Abdalla; Theron, C.C. (Chris); Malherbe, Johan B. (Elsevier, 2020-05)Thin films of tungsten (W) were deposited on glassy carbon (C) substrates using a magnetron sputtering system. The as-deposited samples were annealed isothermally under vacuum at temperatures ranging from 673 to 1273 K. ...
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Halindintwali, S.; Khoele, J.; Nemroaui, O.; Comrie, C.M.; Theron, C.C. (Chris) (Elsevier, 2015-04)Hydrogen effusion from hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-Si1 xCx:H) thin films during a temperature ramp between RT and 600 C was studied by in situ realtime elastic recoil detection ...
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Odutemowo, Opeyemi Shakirah; Malherbe, Johan B.; Theron, C.C. (Chris); Njoroge, Eric Gitau; Wendler, E. (Elsevier, 2016-04)The diffusion behaviour of strontium in glassy carbon was investigated using in-situ real time Rutherford backscattering spectrometry. The sample was annealed in vacuum from room temperature to 650 oC. Diffusion of the ...
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Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M. (Indian Academy of Sciences, 2015-06)Rutherford backscattering spectrometry(RBS) analysis , carried out at various annealing temperatures, of a thin film of ruthenium on n-type 4-hexagonal silicon carbide (4H-SiC) showed evidence of ruthenium oxidation, ruthenium ...
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Njoroge, Eric Gitau; Theron, C.C. (Chris); Skuratov, V.A.; Wamwangi, D.; Hlatshwayo, Thulani Thokozani; Comrie, C.M.; Malherbe, Johan B. (Elsevier, 2016-03)The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in ...
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Njoroge, Eric Gitau; Theron, C.C. (Chris); Malherbe, Johan B.; Ndwandwe, O.M. (Elsevier, 2014-08)Solid state reactions between a thin film (133 nm) of Zr and bulk single crystalline 6H-SiC substrates have been studied at temperatures between 600 °C and 850 °C for durations of 30, 60 and 120 min under high vacuum ...
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Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Prinsloo, Linda Charlotta; Njoroge, Eric Gitau (Elsevier, 2014-05)A thin film of ruthenium (Ru) was deposited on n-type 4H–SiC and 6H–SiC by electron beam deposition technique so as to study interface reaction of ruthenium with silicon carbide at various annealing temperatures, and in ...
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Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Kuhudzai, Remeredzai Joseph; Hlatshwayo, Thulani Thokozani; Thabethe, Thabsile Theodora; Odutemowo, Opeyemi Shakirah; Theron, C.C. (Chris); Friedland, Erich Karl Helmuth; Botha, A.J.; Wendler, E. (Elsevier, 2015-07)This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the ...
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Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Njoroge, Eric Gitau (Springer, 2015-10)Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron ...
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Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Prinsloo, Linda Charlotta; Njoroge, Eric Gitau (Springer, 2014-12)Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering ...
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Theron, C.C. (Chris); Mokoena, N.; Ndwandwe, O.M. (Academy of Science of South Africa, 2009-11)Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then ...
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Structural modification of indium implanted glassy carbon by thermal annealing and SHI irradiation Njoroge, Eric Gitau; Sebitla, L.D.; Theron, C.C. (Chris); Mlambo, Mbuso; Hlatshwayo, Thulani Thokozani; Odutemowo, Opeyemi Shakirah; Skuratov, V.A.; Wendler, E.; Malherbe, Johan B. (Elsevier, 2017-10)Please read abstract in the article.
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Njoroge, Eric Gitau; Theron, C.C. (Chris); Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Hlatshwayo, Thulani Thokozani; Skuratov, V.A. (Elsevier, 2015-07)In this study thin Zr films (135 nm) were deposited on 6H-SiC substrate at room temperature by sputter deposition. The Zr/SiC couples were irradiated by 167 MeV Xe26+ ions at room temperature at fluences of 5.0 1012, ...
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Njoroge, Eric Gitau; Theron, C.C. (Chris); Hlatshwayo, Thulani Thokozani; Malherbe, Johan B. (Royal Society of Chemistry, 2016)Zr films (130 nm) were deposited on a 6H-SiC substrate at room temperature by sputter deposition. The interface solid-state reactions due to high vacuum thermal annealing between 600 °C and 850 °C for 30 min were investigated ...
Now showing items 1-16 of 16