Solid-state compound phase formation of TiSi2 thin films under stress

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Authors

Theron, C.C. (Chris)
Mokoena, N.
Ndwandwe, O.M.

Journal Title

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Publisher

Academy of Science of South Africa

Abstract

Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.

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Keywords

Stress, Real-time Rutherford backscattering spectrometry, Phase formation, TiSi2

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Citation

Theron, C, Mokoena, N & Ndwandwe, OM 2009, 'Solid-state compound phase formation of TiSi2 thin films under stress', South African Journal of Science, vol. 105, no. 11, pp. 440-444. [http://www.sajs.co.za/]