Solid-state compound phase formation of TiSi2 thin films under stress
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Date
Authors
Theron, C.C. (Chris)
Mokoena, N.
Ndwandwe, O.M.
Journal Title
Journal ISSN
Volume Title
Publisher
Academy of Science of South Africa
Abstract
Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.
Description
Keywords
Stress, Real-time Rutherford backscattering spectrometry, Phase formation, TiSi2
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Citation
Theron, C, Mokoena, N & Ndwandwe, OM 2009, 'Solid-state compound phase formation of TiSi2 thin films under stress', South African Journal of Science, vol. 105, no. 11, pp. 440-444. [http://www.sajs.co.za/]