Solid-state compound phase formation of TiSi2 thin films under stress
| dc.contributor.author | Theron, C.C. (Chris) | |
| dc.contributor.author | Mokoena, N. | |
| dc.contributor.author | Ndwandwe, O.M. | |
| dc.date.accessioned | 2010-01-25T06:47:30Z | |
| dc.date.available | 2010-01-25T06:47:30Z | |
| dc.date.issued | 2009-11 | |
| dc.description.abstract | Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples. | en |
| dc.identifier.citation | Theron, C, Mokoena, N & Ndwandwe, OM 2009, 'Solid-state compound phase formation of TiSi2 thin films under stress', South African Journal of Science, vol. 105, no. 11, pp. 440-444. [http://www.sajs.co.za/] | en |
| dc.identifier.issn | 0038-2353 | |
| dc.identifier.uri | http://hdl.handle.net/2263/12721 | |
| dc.language.iso | en | en |
| dc.publisher | Academy of Science of South Africa | en |
| dc.rights | Academy of Science of South Africa | en |
| dc.subject | Stress | en |
| dc.subject | Real-time Rutherford backscattering spectrometry | en |
| dc.subject | Phase formation | en |
| dc.subject | TiSi2 | en |
| dc.subject.lcsh | Thin films | en |
| dc.subject.lcsh | Diffusion | en |
| dc.subject.lcsh | Solid state chemistry | en |
| dc.title | Solid-state compound phase formation of TiSi2 thin films under stress | en |
| dc.type | Article | en |