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Browsing Physics by Author "Chawanda, Albert"
Now showing items 1-17 of 17
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Mtangi, Wilbert; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Nyamhere, Cloud; Nel, Jacqueline Margot; Chawanda, Albert (Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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Mtangi, Wilbert; Nel, J.M.; Auret, Francois Danie; Chawanda, Albert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche) (Elsevier, 2012-10)We report on the studies carried out on hydrogen peroxide treated melt grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8 ± ...
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Gora, Valentine Elifas; Auret, Francois Danie; Danga, Helga Tariro; Tunhuma, Shandirai Malven; Nyamhere, Cloud; Igumbor, Emmanuel; Chawanda, Albert (Elsevier, 2019-08)Please read abstract in the article.
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Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)Please read abstract in article
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Mtangi, Wilbert; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Coelho, Sergio M.M.; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Chawanda, Albert (American Institute of Physics, 2011-11)A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and ...
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Chawanda, Albert; Nel, Jacqueline Margot; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche); Leach, Lindsay Josephine (Korean Physical Society, 2010-12)We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n- Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The ...
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Chawanda, Albert; Mtangi, Wilbert; Auret, Francois Danie; Nel, Jacqueline Margot; Nyamhere, Cloud; Diale, M. (Mmantsae Moche) (Elsevier, 2012-05)The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 ...
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Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Pineda-Vargas, C.A.; Venter, Andre (Elsevier, 2011-08)Please read the abstract in the article.
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Mtangi, Wilbert; Auret, Francois Danie; Nyamhere, Cloud; Janse van Rensburg, Pieter Johan; Chawanda, Albert; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Meyer, Walter Ernst (Elsevier, 2009)Read abstract in article.
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Chawanda, Albert; Roro, K.T.; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Nel, Jacqueline Margot; Leach, Lindsay Josephine (Elsevier, 2011)We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
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Chawanda, Albert; Coelho, Sergio M.M.; Auret, Francois Danie; Mtangi, C.; Nyamhere, J.M.; Nel, Jacqueline Margot; Diale, M. (Mmantsae Moche) (Elsevier, 2012-02)Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and ...
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Chawanda, Albert (University of Pretoria, 2010)Metal-semiconductor contacts have been widely studied in the past 60 years. These structures are of importance in the microelectronics industry. As the scaling down of silicon-based complementary metal-oxide-semiconductor ...
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Chawanda, Albert; Nyamhere, Cloud; Auret, Francois Danie; Nel, Jacqueline Margot; Mtangi, Wilbert; Diale, M. (Mmantsae Moche) (Elsevier, 2012-05)Please read abstract in the article.
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Nel, Jacqueline Margot; Chawanda, Albert; Auret, Francois Danie; Jordaan, W.; Odendaal, R.Q. (Quintin); Hayes, M.; Coelho, Sergio M.M. (Elsevier, 2009)Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
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Mtangi, Wilbert; Schmidt, Matthias; Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Das, A.G.M.; Ling, F.C.C.; Chawanda, Albert (American Institute of Physics, 2013-05-22)We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 C and also in oxygen ambient at different temperatures. ...
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Mtangi, Wilbert; Auret, Francois Danie; Chawanda, Albert; Jansen van Rensburg, P. J.; Coelho, Sergio M.M.; Nel, J.M.; Diale, M. (Mmantsae Moche); Van Schalkwyk, Louwrens; Nyamhere, Cloud (Elsevier, 2012-10)Current–voltage (IV) and capacitance–voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the ...
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Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
Now showing items 1-17 of 17