Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped
n-type germanium by using the electron beam deposition system. Electrical
characterization of these contacts using current-voltage (I-V) and capacitance-voltage
(C-V) measurements was performed under various annealing conditions. The variation
of the electrical properties of these Schottky diodes can be attributed to combined
effects of interfacial reaction and phase transformation during the annealing process.
Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of
500oC. Furthermore, structural characterization of these samples was performed by
using a scanning electron microscopy (SEM) at different annealing temperatures.
Results have also revealed that the onset temperature for agglomeration in a 20 nm
Ir/n-Ge (100) system occurs between 600-700oC.