The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ( ɸʙ) increases with the increasing temperature. The I-V characteristics are analysed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights ɸʙ vs. ½ kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of ɸʙ = 0.615 eV and standard deviation σs0 = 0.00858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm-2 K-2 and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm-2 K-2. This may be due to greater inhomogeneities at the interface.