Jordaan, W.(Southern African Transport Conference, 2016)
The Electric evolution is moving faster that anyone anticipated. This will change all aspects of transport and in particular public transport. This talk will cover some of the topics core to this evolution, including ...
Frei, Walter; Transvaal Department of Agriculture(Pretoria: Government Printer and Stationery Office, 1909)
Experiments were carried out to study quantitatively the influence of various organic colloids in different concentrations on the conductivity of the same electrolyte, that is to say, the influence of albumine, globuline, ...
Govender, Malcolm; Mwakikunga, B.W.; Machatine, Augusto Gonçalo Jose; Kunert, Herbert W.(Wiley, 2014-02)
Laser pyrolysis is a synthesis method used to produce
thin films and nanomaterials of high quality and purity,
by intersecting a laser beam with a chemical precursor.
We have chosen laser pyrolysis to synthesize ...
Metal-semiconductor contacts have been widely studied in the past 60 years. These structures are of importance in the microelectronics industry. As the scaling down of silicon-based complementary metal-oxide-semiconductor ...
Su, Benyu; Malekian, Reza; Yu, Jingcun; Feng, Xihui; Liu, Zhixin(Institute of Electrical and Electronics Engineers, 2016-07)
Based on the Maxwell equation, the occurrences of
fractured zones are studied through the galvanic method. The
electrical and magnetic fields are first derived in the spatial
domain. To simplify the calculations, the ...
The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, ...
Paradzah, Alexander Tapera(University of Pretoria, 2014)
Silicon Carbide is a wide bandgap semiconductor with excellent physical and opto-electrical properties. Among these excellent properties are its radiation hardness, high temperature operation and high electric field ...
Sithole, Enoch Mpho(University of Pretoria, 2006-11-30)
The electrically active defects introduced in GaAs by electron beam deposition (EB) of Ta were characterised. The effect of electron beam deposition on the electrical properties of GaAs was evaluated by current-voltage ...
Paradzah, Alexander Tapera; Auret, Francois Danie; Legodi, Matshisa Johannes; Omotoso, Ezekiel; Diale, M. (Mmantsae Moche)(Elsevier, 2015-09)
Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with
about ten orders of magnitude between 50 V and +2 V. The ideality factor was obtained as 1.05 which
signifies the ...
Ali, Abdulraoof Idriss Ahmed(University of Pretoria, 2022)
The objective of this work was to prepare and study the electrical properties of gallium nitride and Al-doped gallium nitride thin films grown by electrodeposition on different substrates for use in optoelectronic ...
Barnard, Abraham Willem(University of Pretoria, 2017)
Recent advances in semiconductor growth techniques have led to the production of high quality Ge that plays a vital role in the fabrication of electrical devices. Germanium (Ge) is mainly used as a detector material being ...
Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Paradzah, Alexander Tapera; Legodi, Matshisa Johannes(Elsevier, 2016-03)
Deep-level transient spectroscopy (DLTS) and Laplace-DLTS were used to investigate the
effect of alpha-particle irradiation on the electrical properties of nitrogen-doped 4H-SiC. The
samples were bombarded with alpha-particles ...
We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type gallium arsenide by electron beam exposure prior to Schottky ...
Omotoso, Ezekiel; Meyer, Walter Ernst; Coelho, Sergio M.M.; Diale, M. (Mmantsae Moche); Ngoepe, Phuti Ngako Mahloka; Auret, Francois Danie(Elsevier, 2016-08)
We have studied the defects introduced in n-type 4H-SiC during electron beam deposition
(EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage
and capacitance-voltage measurements ...
Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst(Elsevier, 2009)
We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
We have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitance-voltage measurements showed a deterioration of ...