dc.contributor.author |
Venter, Johan H.
|
|
dc.contributor.author |
Sinha, Saurabh
|
|
dc.date.accessioned |
2014-07-01T07:23:02Z |
|
dc.date.available |
2014-07-01T07:23:02Z |
|
dc.date.issued |
2013-04 |
|
dc.description.abstract |
Classically gated infrared (IR) detectors have been implemented
using charge-coupled devices (CCD). Bipolar complementary
metal-oxide semiconductor (BiCMOS) technology emerged as a viable
alternative platform for development. BiCMOS technology has a number
of advantages over CCD and conventional CMOS technology, of which
increased switching speed is one. The pixel topology used in this work
is a reversed-biased diode connected heterojunction bipolar transistor.
The disadvantage of CMOS detectors is the increased readout noise
due to the increased on-chip switching compared to CCD, which degrades
dynamic range (DR) and sensitivity. This yields increased switching
speeds compared to conventional bipolar junction transistors. Sensitivity
improved from 50 mA∕W (peak) at 430 nm in CCD detectors to
180 mA∕W (peak) (or 180; 000 V∕W) at 665 nm in BiCMOS detectors.
Other CMOS IR detectors previously published in the literature showed
sensitivity values from 2750 to 5000 V∕W or 100 mA∕W. The DR also
improved from 47 and 53 dB to 70 dB. The sensitivity of conventional
CCD detectors previously published is around 53 mA∕W. The second advantage
is that detection in the near-IR band with conventional silicon integrated
technology is possible. This work has shown increased detection
capabilities up to 1.1 μm compared to Si detectors. |
en_US |
dc.description.librarian |
am2014 |
en_US |
dc.description.sponsorship |
The authors would like to thank Armscor, the Armament
Corporation of South Africa Ltd (Act 51 of 2003) for financial
assistance. The administration of the grant was facilitated
through the Defence, Peace, Safety, and Security
(DPSS) business unit of the Council for Scientific and
Industrial Research (CSIR), South Africa. |
en_US |
dc.description.uri |
http://spie.org/x867.xml |
en_US |
dc.identifier.citation |
Venter, J & Sinha, S 2013, 'Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology', Optical Engineering, vol. 52, no. 4, pp. 044001-7. |
en_US |
dc.identifier.issn |
0091-3286 (print) |
|
dc.identifier.issn |
1560-2303 (online) |
|
dc.identifier.other |
10.1117/1.OE.52.4.044001 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/40469 |
|
dc.language.iso |
en |
en_US |
dc.publisher |
Society of Photo-optical Instrumentation Engineers |
en_US |
dc.rights |
© 2013 SPIE |
en_US |
dc.subject |
Heterojunctions |
en_US |
dc.subject |
Detectors |
en_US |
dc.subject |
Noise |
en_US |
dc.subject |
Photodetectors |
en_US |
dc.subject |
Charge-coupled devices (CCD) |
en_US |
dc.subject |
Infrared (IR) |
en_US |
dc.title |
Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology |
en_US |
dc.type |
Article |
en_US |