dc.contributor.author |
Splith, Daniel
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dc.contributor.author |
Muller, Stefan
|
|
dc.contributor.author |
Schmidt, Florian
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dc.contributor.author |
Von Wenckstern, Holger
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dc.contributor.author |
Jansen van Rensburg, Johan
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dc.contributor.author |
Meyer, Walter Ernst
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dc.contributor.author |
Grundmann, Marius
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dc.date.accessioned |
2014-03-07T10:13:56Z |
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dc.date.available |
2014-03-07T10:13:56Z |
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dc.date.issued |
2014-01 |
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dc.description.abstract |
Please read abstract in the article. |
en |
dc.description.librarian |
hb2014 |
en |
dc.description.librarian |
ai2014 |
|
dc.description.sponsorship |
EFRE (SAB 100132251) and by Universität Leipzig. |
en |
dc.description.uri |
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319 |
en |
dc.identifier.citation |
Splith, D, Muller, S, Schmidt, F, Von Wenckstern, H., Van Rensburg, JJ, Meyer, WE & Grundmann, M 2014, 'Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition', Physica Status Solidi (A) Applications and Materials Science, vol. 211, no. 1, pp. 40-47. |
en |
dc.identifier.issn |
1862-6300 (print) |
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dc.identifier.issn |
1862-6319 (online) |
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dc.identifier.other |
10.1002/pssa.201330088 |
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dc.identifier.uri |
http://hdl.handle.net/2263/37099 |
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dc.language.iso |
en |
en |
dc.publisher |
Wiley-Blackwell |
en |
dc.rights |
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article : Physica Status Solidi A : Applications and Materials Science, vol. 211, no.1, pp. 40-47, 2014. doi : 10.1002/pssa.201330088 which has been published in final form at : http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319 |
en |
dc.subject |
Gallium oxide |
en |
dc.subject |
Heteroepitaxy |
en |
dc.subject |
Schottky barriers |
en |
dc.subject.lcsh |
Gallium compounds |
en |
dc.subject.lcsh |
Thin films |
en |
dc.subject.lcsh |
Pulsed laser deposition |
en |
dc.subject.lcsh |
Semiconductors |
en |
dc.title |
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition |
en |
dc.type |
Postprint Article |
en |