dc.contributor.author |
Mtangi, Wilbert
|
|
dc.contributor.author |
Schmidt, Matthias
|
|
dc.contributor.author |
Auret, Francois Danie
|
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dc.contributor.author |
Meyer, Walter Ernst
|
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dc.contributor.author |
Janse van Rensburg, Pieter Johan
|
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dc.contributor.author |
Diale, M. (Mmantsae Moche)
|
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dc.contributor.author |
Nel, Jacqueline Margot
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dc.contributor.author |
Das, A.G.M.
|
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dc.contributor.author |
Ling, F.C.C.
|
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dc.contributor.author |
Chawanda, Albert
|
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dc.date.accessioned |
2013-06-05T14:03:17Z |
|
dc.date.available |
2013-06-05T14:03:17Z |
|
dc.date.issued |
2013-05-22 |
|
dc.description |
APPENDIX A: DECONVOLUTION OF THE E3 AND T2
DEEP LEVELS |
en |
dc.description |
APPENDIX B: CALCULATION OF THE DEFECT DEPTH
PROFILE |
en |
dc.description.abstract |
We report on the space charge spectroscopy studies performed on thermally treated melt-grown
single crystal ZnO. The samples were annealed in different ambients at 700 C and also in oxygen
ambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27meV
was observed in the as-received samples by capacitance-temperature, CT scans. After annealing the
samples, an increase in the shallow donor concentrations was observed. For the annealed samples,
E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35meV
was detected. For samples annealed above 650 C, an increase in acceptor concentration was
observed which affected the low temperature capacitance. Deep level transient spectroscopy
revealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples.
Annealing of the samples at 650 C removes the E4 and E5 deep level defects, while E2 also
anneals-out at temperatures above 800 C. After annealing at 700 C, the T2 deep level defect was
observed in all other ambient conditions except in Ar. The emission properties of the E3 deep level
defect are observed to change with increase in annealing temperature beyond 800 C. For samples
annealed beyond 800 C, a decrease in activation enthalpy with increase in annealing temperature
has been observed which suggests an enhanced thermal ionization rate of E3 with annealing. |
en |
dc.description.librarian |
am2013 |
en |
dc.description.librarian |
ai2013 |
en |
dc.description.sponsorship |
The authors wish to thank the University of Pretoria for the
financial support. Matthias Schmidt was funded by the
Postdoctoral Fellowship Program of the University of Pretoria.
This work is based upon research supported by the National
Research Foundation (NRF). Any opinion, findings and conclusions
or recommendations expressed in this material are those
of the author(s) and therefore the NRF does not accept any
liability in regard thereto. The Laplace DLTS software and
hardware used in the research was kindly provided by A. R.
Peaker (Centre for electronic Materials Devices and
Nanostructures, University of Manchester) and L. Dobaczewski
(Institute of Physics, Polish Academy of Sciences). |
en |
dc.description.uri |
http://jap.aip.org/ |
en |
dc.identifier.citation |
Mtandgi, W, Schmidt, M, Auret, FD, Meyer, WE, Janse van Rensburg, PJ, Diale, M, Nel, JM, Das, AGM, Ling, FCC & Chawanda, A 2013, 'A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals', Journal of Applied Physics, vol. 113, pp. 124502-1-8. |
en |
dc.identifier.issn |
0021-8979 (print) |
|
dc.identifier.issn |
1089-7550 (online) |
|
dc.identifier.other |
10.1063/1.4796139 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/21597 |
|
dc.language.iso |
en |
en |
dc.publisher |
American Institute of Physics |
en |
dc.rights |
© 2013 American Institute of Physics |
en |
dc.subject |
T2 defect |
en |
dc.subject |
Melt-grown single crystal ZnO |
en |
dc.subject.lcsh |
Thermochemistry |
en |
dc.subject.lcsh |
Annealing of crystals |
en |
dc.subject.lcsh |
Zinc oxide |
en |
dc.subject.lcsh |
Zinc crystals |
en |
dc.title |
A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals |
en |
dc.type |
Article |
en |