Diffusion behaviour of cesium in silicon carbide at T > 1000 °C

Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Malherbe, Johan B.; Wendler, E.

dc.contributor.author	Friedland, Erich Karl Helmuth
dc.contributor.author	Van der Berg, Nic (Nicolaas George)
dc.contributor.author	Hlatshwayo, Thulani Thokozani
dc.contributor.author	Kuhudzai, Remeredzai Joseph
dc.contributor.author	Malherbe, Johan B.
dc.contributor.author	Wendler, E.
dc.date.accessioned	2012-01-24T06:28:50Z
dc.date.available	2012-01-24T06:28:50Z
dc.date.issued	2012
dc.description.abstract	Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). Implantations were done at room temperature, 350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed. Transport mechanisms were studied by isochronal and isothermal annealing methods up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by an impurity trapping mechanism of defect structures and is similar in single and polycrystalline SiC.	en
dc.description.librarian	nf2012	en
dc.description.sponsorship	National Research Foundation and the Bundesministerium für Bildung und Forschung.	en_US
dc.description.uri	http://www.sciencedirect.com/science/journal/0168583X	en_US
dc.identifier.citation	Friedland, E et al., Diffusion behaviour of cesium in silicon carbide, Nuclear Instruments & Methods in Physics Research Section B : Beam Interactions with Materials and Atoms. (2012), doi:10.1016/j.nimb.2011.11.048	en
dc.identifier.issn	0168-583X (print)
dc.identifier.issn	1872-9584 (online)
dc.identifier.other	10.1016/j.nimb.2011.11.048
dc.identifier.uri	http://hdl.handle.net/2263/17877
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	© 2012 Published by Elsevier B.V.	en
dc.subject	Isochronal and isothermal annealing	en
dc.subject.lcsh	Diffusion	en
dc.subject.lcsh	Cesium -- Diffusion rate	en
dc.subject.lcsh	Silicon carbide	en
dc.subject.lcsh	Ion implantation	en
dc.title	Diffusion behaviour of cesium in silicon carbide at T > 1000 °C	en
dc.type	Postprint Article	en