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Deep level transient spectroscopy (DLTS) (17)
Defects (6)
Defect (3)
Germanium (3)
Alpha particle irradiation (2)
Discrete breathers (2)
Electron beam exposure (2)
Electron beam exposure (EBE) (2)
Laplace deep level transient spectroscopy (L-DLTS) (2)
4H-SiC (1)
4H–silicon carbide (1)
Alpha-particle irradiation (1)
Anneal (1)
Atomic force microscopy (AFM) (1)
Au/Ni Schottky diodes (1)
Band edge (1)
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Binary collision approximations (1)
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Capture barrier energy (1)
Capture cross sections (1)
Crystal defects (1)
Cs implantation (1)
Deep levels (1)
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DLTS measurements (1)
Electrically active defects (1)
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Electron beam deposition (EBD) (1)
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Gallium arsenide (1)
Gallium Nitride (GaN) (1)
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GaN (1)
GaN synthesized (1)
Ge samples (1)
Generation recombination (1)
Halide perovskites (1)
High energy electron (HEE) (1)
Hydride vapour phase epitaxy (HVPE) (1)
Inductively coupled plasma (ICP) (1)
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Intrinsic localized mode (ILM) (1)
Ion implantation (1)
Irradiation (1)
Laplace DLTS (1)
Laplace transforms (1)
Laplace-DLTS (1)
Lead bromide (1)
Metastable defects (1)
n-GaAs (1)
n-Ge (1)
n-Type 4H-SiC (1)
Open circuit voltage (1)
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Pulse width (1)
Quodons (1)
Raman spectroscopy (1)
Scanning electron microscopy (SEM) (1)
Schottky barrier diodes (1)
Schottky barrier diodes (SBDs) (1)
Schottky contacts (1)
Schottky diode (1)
Schottky diodes (1)
Silicon (Si) (1)
Silicon carbide (1)
Silicon carbide (SiC) (1)
Single crystals (1)
Solid state reactions (1)
Spectroscopy (1)
Swift heavy ion (SHI) (1)
Temperature range (1)
Thermal reactions (1)
Threshold energy (1)
Tungsten carbide (1)
Wide band gap semiconductors (1)
X-ray diffraction (XRD) (1)