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Now showing items 1-81
Deep level transient spectroscopy (DLTS) (17)
Defects (6)
Defect (3)
Germanium (3)
Alpha particle irradiation (2)
Discrete breathers (2)
Electron beam exposure (2)
Electron beam exposure (EBE) (2)
Laplace deep level transient spectroscopy (L-DLTS) (2)
4H-SiC (1)
4H–silicon carbide (1)
Alpha-particle irradiation (1)
Anneal (1)
Atomic force microscopy (AFM) (1)
Au/Ni Schottky diodes (1)
Band edge (1)
Band gap states (1)
Binary collision approximations (1)
Bulk defects (1)
Capture barrier energy (1)
Capture cross sections (1)
Crystal defects (1)
Cs implantation (1)
Deep levels (1)
Defect state (1)
Defects induced (1)
Detectors (1)
Diffusion (1)
Diodes (1)
DLTS measurements (1)
Electrically active defects (1)
Electrodeposition (1)
Electron beam deposition (EBD) (1)
Electron irradiation (1)
Gallium arsenide (1)
Gallium Nitride (GaN) (1)
Gallium nitride (GaN) (1)
GaN (1)
GaN synthesized (1)
Ge samples (1)
Generation recombination (1)
Halide perovskites (1)
High energy electron (HEE) (1)
Hydride vapour phase epitaxy (HVPE) (1)
Inductively coupled plasma (ICP) (1)
Interface states (1)
Intrinsic localized mode (ILM) (1)
Ion implantation (1)
Irradiation (1)
Laplace DLTS (1)
Laplace transforms (1)
Laplace-DLTS (1)
Lead bromide (1)
Metastable defects (1)
n-GaAs (1)
n-Ge (1)
n-Type 4H-SiC (1)
Open circuit voltage (1)
Power quality (1)
Pulse width (1)
Quodons (1)
Raman spectroscopy (1)
Scanning electron microscopy (SEM) (1)
Schottky barrier diodes (1)
Schottky barrier diodes (SBDs) (1)
Schottky contacts (1)
Schottky diode (1)
Schottky diodes (1)
Silicon (Si) (1)
Silicon carbide (1)
Silicon carbide (SiC) (1)
Single crystals (1)
Solid state reactions (1)
Spectroscopy (1)
Swift heavy ion (SHI) (1)
Temperature range (1)
Thermal reactions (1)
Threshold energy (1)
Tungsten carbide (1)
Wide band gap semiconductors (1)
X-ray diffraction (XRD) (1)
Now showing items 1-81
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