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UP Experts (Danie Auret Collection): Recent submissions
Now showing items 1-20 of 24
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(Suid Afrikaanse Akademie vir Wetenskap & Kuns, 2011)Spectral and electrical characteristion of ultraviolet (UV) sensitive photodiodes requires a calibrated optoelectronic system. For spectral characteristion, the irradiance of the UV light source, after the light passed ...
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(American Institute of Physics (AIP), 2010-10)We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...
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(Korean Physical Society, 2010-12)We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n- Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The ...
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(Elsevier, 2011)We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
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(Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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(American Institute of Physics, 2011-01)Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
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(American Institute of Physics, 2010-03)Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
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(Elsevier, 2009)Please read abstract in article.
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(Elsevier, 2009)Please read abstract in article
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(Elsevier, 2009)Please read abstract in article
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(Elsevier, 2009)Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
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Electrical characterization of defects introduced during metallization processes in n-type germanium (Elsevier, 2009)We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
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(Elsevier, 2007-12-15)When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
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(Elsevier, 2007-12)Please refer to abstract in article
Now showing items 1-20 of 24