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Browsing UP Experts (Danie Auret Collection) by Subject "Deep level transient spectroscopy"

Now showing items 1-14 of 14

Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)

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Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
Defect production in strained p-type Si1-xGex by Er implantation

Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M. (American Institute of Physics, 2011-01)

Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Mtangi, Wilbert; Auret, Francois Danie; Nyamhere, Cloud; Janse van Rensburg, Pieter Johan; Chawanda, Albert; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Meyer, Walter Ernst (Elsevier, 2009)

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Effect of alpha-particle irradiation on the electrical properties of n-type Ge

Roro, K.T.; Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Coelho, Sergio M.M. (Elsevier, 2009)

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Electrical characterization of defects in heavy-ion implanted n-type Ge

Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Coelho, Sergio M.M.; Meyer, Walter Ernst; Decoster, S.; Matias, V.S.; Vantomme, A.; Smeets, D. (Elsevier, 2007-04)

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Electrical characterization of defects introduced during metallization processes in n-type germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst (Elsevier, 2009)

We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
Electrical characterization of rare-earth implanted GaN

Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A. (Elsevier, 2009)

Please read abstract in article
Electrical characterization of vapor-phase-grown single-crystal ZnO

Auret, Francois Danie; Goodman, Stewart Alexander; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Look, D.C. (American Institute of Physics, 2002-02-25)

Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels ...
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

Please read abstract in article.
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius (Elsevier, 2007-12)

Please refer to abstract in article
High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon

Auret, Francois Danie; Peaker, A.R.; Markevich, V.P.; Dobaczewski, L.; Gwilliam, R.M. (Elsevier, 2006-04)

We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
Lithium and electrical properties of ZnO

Vines, L.; Monakhov, E.V.; Schifano, R.; Mtangi, Wilbert; Auret, Francois Danie; Svensson, B.G. (American Institute of Physics, 2010-03)

Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...

Now showing items 1-14 of 14

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Browsing UP Experts (Danie Auret Collection) by Subject "Deep level transient spectroscopy"

Browsing UP Experts (Danie Auret Collection) by Subject "Deep level transient spectroscopy"

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