Tunhuma, Shandirai Malven; Auret, Francois Danie; Legodi, Matshisa Johannes; Diale, M. (Mmantsae Moche)
(American Institute of Physics, 2016)
Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy
(DLTS) and Laplace DLTS (L-DLTS). The E0.83 (EL2) is the only defect observed prior to
irradiation. Ru/n-GaAs ...