Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application
| dc.contributor.author | Igumbor, Emmanuel | |
| dc.contributor.author | Mapasha, Refilwe Edwin | |
| dc.contributor.author | Raji, Abdulrafiu T. | |
| dc.date.accessioned | 2026-02-03T09:29:44Z | |
| dc.date.available | 2026-02-03T09:29:44Z | |
| dc.date.issued | 2026-04 | |
| dc.description | DATA AVAILABILITY : Data will be made available on request. | |
| dc.description.abstract | Please read abstract in the article. | |
| dc.description.department | Physics | |
| dc.description.librarian | hj2026 | |
| dc.description.sdg | SDG-07: Affordable and clean energy | |
| dc.description.sponsorship | Support from the University of Johannesburg, South Africa and the University of Pretoria, South Africa. | |
| dc.description.uri | https://www.elsevier.com/locate/cocom | |
| dc.identifier.citation | Igumbor, E., Mapasha, E. & Raji, A.T. 2026, 'Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application', Computational Condensed Matter, vol. 46, art. e01219, pp. 1-9, doi : 10.1016/j.cocom.2026.e01219. | |
| dc.identifier.issn | 2352-2143 (online) | |
| dc.identifier.other | 10.1016/j.cocom.2026.e01219 | |
| dc.identifier.uri | http://hdl.handle.net/2263/107797 | |
| dc.language.iso | en | |
| dc.publisher | Elsevier | |
| dc.rights | © 2026 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies. Notice : this is the author’s version of a work that was submitted for publication in Computational Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Computational Condensed Matter, vol. 46, art. e01219, pp. 1-9, 2026, doi : 10.1016/j.cocom.2026.e01219. | |
| dc.subject | Defect | |
| dc.subject | Formation energy | |
| dc.subject | Spin-polarized | |
| dc.subject | Charge transfer | |
| dc.subject | Monolayer siC | |
| dc.subject | 2D materials | |
| dc.subject | Magnetic | |
| dc.subject | Silicon carbide (SiC) | |
| dc.subject | Two-dimensional (2D) | |
| dc.title | Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application | |
| dc.type | Preprint Article |