Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application

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Igumbor_Structural_2026.pdf (4.12 MB)

Date

2026-04

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Elsevier

Abstract

Please read abstract in the article.

Description

DATA AVAILABILITY : Data will be made available on request.

Keywords

Defect, Formation energy, Spin-polarized, Charge transfer, Monolayer siC, 2D materials, Magnetic, Silicon carbide (SiC), Two-dimensional (2D)

Sustainable Development Goals

SDG-07: Affordable and clean energy

Citation

Igumbor, E., Mapasha, E. & Raji, A.T. 2026, 'Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application', Computational Condensed Matter, vol. 46, art. e01219, pp. 1-9, doi : 10.1016/j.cocom.2026.e01219.

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http://hdl.handle.net/2263/107797

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Research Articles (Physics)
Research Articles (University of Pretoria)
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