Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC

dc.contributor.authorMadito, Moshawe J.
dc.contributor.authorHlatshwayo, Thulani Thokozani
dc.contributor.authorSkuratov, Vladimir Alexeevich
dc.contributor.authorMtshali, Christopher B.
dc.contributor.authorManyala, Ncholu I.
dc.contributor.authorKhumalo, Zakhelumuzi M.
dc.date.accessioned2019-08-15T12:25:31Z
dc.date.issued2019-11
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2020-11-01
dc.description.librarianhj2019en_ZA
dc.description.sponsorshipThe National Research Foundation of South Africa (NRF) via iThemba LABS Materials Research Department (MRD).en_ZA
dc.description.urihttp://www.elsevier.com/locate/apsuscen_ZA
dc.identifier.citationMadito, M.J., Hlatshwayo, T.T., Skuratov, V.A. et al. 2019, 'Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC', Applied Surface Science, vol. 493, pp. 1291-1298.en_ZA
dc.identifier.issn0169-4332 (print)
dc.identifier.issn1873-5584 (online)
dc.identifier.other10.1016/j.apsusc.2019.07.147
dc.identifier.urihttp://hdl.handle.net/2263/71114
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2019 Elsevier B.V.. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Applied Surface Science, vol. 493, pp. 1291-1298, 2019. doi : 10.1016/j.apsusc.2019.07.147.en_ZA
dc.subjectRutherford backscattering spectrometry (RBS)en_ZA
dc.subjectSwift heavy ion (SHI)en_ZA
dc.subjectScanning near-field optical microscopy (SNOM)en_ZA
dc.subject4H-SiCen_ZA
dc.subjectDepth profilesen_ZA
dc.subjectXe ionsen_ZA
dc.subjectSilicon carbideen_ZA
dc.subjectEpitaxial layeren_ZA
dc.subjectStopping and range of ions in matter (SRIM)en_ZA
dc.titleCharacterization of 167 MeV Xe ion irradiated n-type 4H-SiCen_ZA
dc.typePostprint Articleen_ZA

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