Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC
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Date
Authors
Madito, Moshawe J.
Hlatshwayo, Thulani Thokozani
Skuratov, Vladimir A.
Mtshali, Christopher B.
Manyala, Ncholu I.
Khumalo, Zakhelumuzi M.
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Publisher
Elsevier
Abstract
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Description
Keywords
Rutherford backscattering spectrometry (RBS), Swift heavy ion (SHI), Scanning near-field optical microscopy (SNOM), 4H-SiC, Depth profiles, Xe ions, Silicon carbide, Epitaxial layer, Stopping and range of ions in matter (SRIM)
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Citation
Madito, M.J., Hlatshwayo, T.T., Skuratov, V.A. et al. 2019, 'Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC', Applied Surface Science, vol. 493, pp. 1291-1298.