The fine structure of electron irradiation induced EL2-like defects in n-GaAs
| dc.contributor.author | Tunhuma, Shandirai Malven | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Legodi, Matshisa Johannes | |
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.date.accessioned | 2016-06-09T07:25:50Z | |
| dc.date.available | 2016-06-09T07:25:50Z | |
| dc.date.issued | 2016 | |
| dc.description.abstract | Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS). The E0.83 (EL2) is the only defect observed prior to irradiation. Ru/n-GaAs Schottky diodes were irradiated with high energy electrons from a Sr-90 radionuclide up to a fluence of 2.45 1013 cm 2. The prominent electron irradiation induced defects, E0.04, E0.14, E0.38, and E0.63, were observed together with the metastable E0.17. Using L-DLTS, we observed the fine structure of a broad base EL2-like defect peak. This was found to be made up of the E0.75, E0.83, and E0.85 defects. Our study reveals that high energy electron irradiation increases the concentration of the E0.83 defect and introduces a family of defects with electronic properties similar to those of the EL2. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.librarian | am2016 | en_ZA |
| dc.description.sponsorship | The authors gratefully acknowledge the financial support of the South African National Research Foundation (NRF) and the University of Pretoria. | en_ZA |
| dc.description.sponsorship | The South African National Research Foundation (NRF) and the University of Pretoria. | en_ZA |
| dc.description.uri | http://scitation.aip.org/content/aip/journal/jap | en_ZA |
| dc.identifier.citation | Tunhuma, SM, Auret, FD, Legodi, MJ & Diale, M 2015, 'The fine structure of electron irradiation induced EL2-like defects in n -GaAs', Journal of Applied Physics, vol. 119, no. 1, art. no. 145705, pp. 1-5. | en_ZA |
| dc.identifier.issn | 0021-8979 (print) | |
| dc.identifier.issn | 1089-7550 (online) | |
| dc.identifier.other | 10.1063/1.4945774 | |
| dc.identifier.uri | http://hdl.handle.net/2263/52918 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | American Institute of Physics | en_ZA |
| dc.rights | © 2016 AIP Publishing LLC | en_ZA |
| dc.subject | Electron irradiation | en_ZA |
| dc.subject | n-GaAs | en_ZA |
| dc.subject | Defects | en_ZA |
| dc.subject | Deep level transient spectroscopy (DLTS) | en_ZA |
| dc.subject | Laplace deep level transient spectroscopy (L-DLTS) | en_ZA |
| dc.title | The fine structure of electron irradiation induced EL2-like defects in n-GaAs | en_ZA |
| dc.type | Article | en_ZA |