The fine structure of electron irradiation induced EL2-like defects in n-GaAs

Abstract

Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS). The E0.83 (EL2) is the only defect observed prior to irradiation. Ru/n-GaAs Schottky diodes were irradiated with high energy electrons from a Sr-90 radionuclide up to a fluence of 2.45 1013 cm 2. The prominent electron irradiation induced defects, E0.04, E0.14, E0.38, and E0.63, were observed together with the metastable E0.17. Using L-DLTS, we observed the fine structure of a broad base EL2-like defect peak. This was found to be made up of the E0.75, E0.83, and E0.85 defects. Our study reveals that high energy electron irradiation increases the concentration of the E0.83 defect and introduces a family of defects with electronic properties similar to those of the EL2.